? semiconductor components industries, llc, 2012 january, 2012 ? rev. 7 1 publication order number: mmsz2v4et1/d mmszxxxet1g series, szmmszxxxet1g series zener voltage regulators 500 mw sod ? 123 surface mount three complete series of zener diodes are offered in the convenient, surface mount plastic sod ? 123 package. these devices provide a convenient alternative to the leadless 34 ? package style. specification features ? 500 mw rating on fr ? 4 or fr ? 5 board ? wide zener reverse voltage range ? 2.4 v to 56 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (> 16 kv) per human body model ? peak power ? 225 w (8 x 20 s) ? aec ? q101 qualified and ppap capable ? sz prefix for automotive and other applications requiring unique site and control change requirements ? pb ? free packages are available* mechanical characteristics case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 ? c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v ? 0 maximum ratings rating symbol max unit peak power dissipation @ 20 s (note 1) @ t l ? 25 ? c p pk 225 w total power dissipation on fr ? 5 board, (note 2) @ t l = 75 ? c derated above 75 ? c p d 500 6.7 mw mw/ ? c thermal resistance, junction ? to ? ambient (note 3) r ja 340 ? c/w thermal resistance, junction ? to ? lead (note 3) r jl 150 ? c/w junction and storage temperature range t j , t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. nonrepetitive current pulse per figure 11 2. fr ? 5 = 3.5 x 1.5 inches, using the on minimum recommended footprint 3. thermal resistance measurement obtained via infrared scan method *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. http://onsemi.com sod ? 123 case 425 style 1 1 cathode 2 anode marking diagram device package shipping ? ordering information mmszxxxet1g sod ? 123 (pb ? free) 3,000 / tape & reel mmszxxxet3g sod ? 123 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. see specific marking information in the device marking column of the electrical characteristics table on page 2 of this data sheet. device marking information xxx = device code m = date code = pb ? free package (note: microdot may be in either location) szmmszxxxet1g sod ? 123 (pb ? free) 3,000 / tape & reel xxx m 1
mmszxxxet1g series, szmmszxxxet1g series http://onsemi.com 2 electrical characteristics (t a = 25 ? c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f zener voltage regulator i f v i i r i zt v r v z v f electrical characteristics (t a = 25 ? c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma) device* device marking v z1 (v) (notes 4 and 5) z zt1 (note 6) v z2 (v) (notes 4 and 5) z zt2 (note 6) max reverse leakage current @ i zt1 = 5 ma @ i zt2 = 1 ma i r @ v r min nom max min max a v mmsz2v4et1g mmsz2v7et1g mmsz3v0et1g mmsz3v3et1g mmsz3v6et1g cl1 cl2 cl3 cl4 cl5 2.28 2.57 2.85 3.14 3.42 2.4 2.7 3.0 3.3 3.6 2.52 2.84 3.15 3.47 3.78 100 100 95 95 90 1.7 1.9 2.1 2.3 2.7 2.1 2.4 2.7 2.9 3.3 600 600 600 600 600 50 20 10 5 5 1 1 1 1 1 mmsz3v9et1g mmsz4v3et1g mmsz4v7et1g mmsz5v1et1g mmsz5v6et1g cl6 cl7 cl8 cl9 cm1 3.71 4.09 4.47 4.85 5.32 3.9 4.3 4.7 5.1 5.6 4.10 4.52 4.94 5.36 5.88 90 90 80 60 40 2.9 3.3 3.7 4.2 4.8 3.5 4.0 4.7 5.3 6.0 600 600 500 480 400 3 3 3 2 1 1 1 2 2 2 mmsz6v2et1g mmsz6v8et1g mmsz7v5et1g mmsz8v2et1g mmsz9v1et1g cm2 cm3 cm4 cm5 cm6 5.89 6.46 7.13 7.79 8.65 6.2 6.8 7.5 8.2 9.1 6.51 7.14 7.88 8.61 9.56 10 15 15 15 15 5.6 6.3 6.9 7.6 8.4 6.6 7.2 7.9 8.7 9.6 150 80 80 80 100 3 2 1 0.7 0.5 4 4 5 5 6 mmsz10et1g mmsz11et1g mmsz12et1g mmsz13et1g mmsz15et1g cm7 cm8 cm9 cn1 cn2 9.50 10.45 11.40 12.35 14.25 10 11 12 13 15 10.50 11.55 12.60 13.65 15.75 20 20 25 30 30 9.3 10.2 11.2 12.3 13.7 10.6 11.6 12.7 14.0 15.5 150 150 150 170 200 0.2 0.1 0.1 0.1 0.05 7 8 8 8 10.5 mmsz16et1g mmsz18et1g MMSZ20ET1G mmsz22et1g mmsz24et1g cn3 cn4 cn5 cn6 cn7 15.20 17.10 19.00 20.90 22.80 16 18 20 22 24 16.80 18.90 21.00 23.10 25.20 40 45 55 55 70 15.2 16.7 18.7 20.7 22.7 17.0 19.0 21.1 23.2 25.5 200 225 225 250 250 0.05 0.05 0.05 0.05 0.05 11.2 12.6 14 15.4 16.8 4. the type numbers shown have a standard tolerance of ? 5% on the nominal zener voltage. 5. tolerance and voltage designation: zener voltage (vz) is measured with the zener current applied for pw = 1 ms. 6. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc), with the ac frequency = 1 khz. devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. *include sz-prefix devices where applicable.
mmszxxxet1g series, szmmszxxxet1g series http://onsemi.com 3 electrical characteristics (t a = 25 ? c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma) device* device marking v z1 (v) (notes 7 and 8) z zt1 (note 9) v z2 (v) (notes 7 and 8) z zt2 (note 9) max reverse leakage current @ i zt1 = 2 ma @ i zt2 = 0.1 ma @ i zt2 = 0.5 ma i r @ v r min nom max min max a v mmsz27et1g mmsz30et1g mmsz33et1g mmsz36et1g mmsz39et1g cn8 cn9 cp1 cp2 cp3 25.65 28.50 31.35 34.20 37.05 27 30 33 36 39 28.35 31.50 34.65 37.80 40.95 80 80 80 90 130 25 27.8 30.8 33.8 36.7 28.9 32 35 38 41 300 300 325 350 350 0.05 0.05 0.05 0.05 0.05 18.9 21 23.1 25.2 27.3 mmsz43et1g mmsz47et1g mmsz51et1g mmsz56et1g cp4 cp5 cp6 cp7 40.85 44.65 48.45 53.20 43 47 51 56 45.15 49.35 53.55 58.80 150 170 180 200 39.7 43.7 47.6 51.5 46 50 54 60 375 375 400 425 0.05 0.05 0.05 0.05 30.1 32.9 35.7 39.2 7. the type numbers shown have a standard tolerance of ? 5% on the nominal zener voltage. 8. tolerance and voltage designation: zener voltage (vz) is measured with the zener current applied for pw = 1 ms. 9. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc), with the ac frequency = 1 khz. devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. *include sz-prefix devices where applicable.
mmszxxxet1g series, szmmszxxxet1g series http://onsemi.com 4 typical characteristics vz , temperature coefficient (mv/ c) ? ? v z , nominal zener voltage (v) ? 3 ? 2 ? 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 ? c to +150 ? c) typical t c values for mmszxxxt1g series, szmmszxxxt1g series v z @ i zt vz , temperature coefficient (mv/ c) ? ? 100 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 ? c to +150 ? c) v z @ i zt 1.2 1.0 0.8 0.6 0.4 0.2 0 150 125 100 75 50 25 0 t, temperature ( ? c) figure 3. steady state power derating p d versus t a p d versus t l p pk , peak surge power (watts) 0.1 pw, pulse width (ms) figure 4. maximum nonrepetitive surge power 1 10 100 1000 1000 100 10 1 rectangular waveform, t a = 25 ? c 100 v z , nominal zener voltage figure 5. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) ? 1000 100 10 1 t j = 25 ? c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 6. typical forward voltage 1. 2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmsz5267bt1g) 91 v (mmsz5270bt1g) 150 ? c 75 ? c 25 ? c typical t c values for mmszxxxt1g series, szmmszxxxt1g series 0 ? c 10 1 p d , power dissipation (watts)
mmszxxxet1g series, szmmszxxxet1g series http://onsemi.com 5 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 7. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 ? c i r , leakage current ( a) ? 90 v z , nominal zener voltage (v) figure 8. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 ? c +25 ? c ? 55 ? c i z , zener current (ma) figure 9. zener voltage versus zener current (v z up to 12 v) figure 10. zener voltage versus zener current (12 v to 91 v) 100 figure 11. 8 ? 20 s pulse waveform 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s half value i rsm /2 @ 20 s % of peak pulse current peak value i rsm @ 8 s t a = 25 ? c t a = 25 ? c
mmszxxxet1g series, szmmszxxxet1g series http://onsemi.com 6 package dimensions sod ? 123 case 425 ? 04 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. aaaa aaaa e b d a l c 1 2 a1 dim min nom max millimeters inches a 0.94 1.17 1.35 0.037 a1 0.00 0.05 0.10 0.000 b 0.51 0.61 0.71 0.020 c 1.60 0.15 0.055 d 1.40 1.80 e 2.54 2.69 2.84 0.100 --- 3.68 0.140 l 0.25 3.86 0.010 h e 0.046 0.002 0.024 0.063 0.106 0.145 0.053 0.004 0.028 0.071 0.112 0.152 min nom max 3.56 h e --- --- --- 0.006 --- --- --- --- *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. cathode 2. anode 1.22 0.048 mm inches scale 10:1 --- --- 00 10 10 ??? ? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmsz2v4et1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
